Disilicide solid solutions, phase diagram, and resistivities. II. TaSi/sub 2/-WSi/sub 2/
The preparation of TaSi/sub 2/-WSi/sub 2/ alloys from the reaction of Si with Ta-W films allows one to explore the constitution diagram of the TaSi/sub 2/-WSi/sub 2/ pseudobinary system. The structure of the alloys has been investigated by means of Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. The ''equilibrium'' phase diagrams for the system TaSi/sub 2/-WSi/sub 2/ and for TiSi/sub 2/-WSi/sub 2/ are compared in light of simple ideas of alloy theory based on the consideration of the electron to atom ratios. The resistivity of the alloys is analyzed in terms of what has been established about the transport properties of the disilicides and of possible contributions of structural defects, mostly stacking faults, to scattering processes.
- Research Organization:
- IBM Research Laboratory, P. O. Box 218, Yorktown Heights, New York 10598
- OSTI ID:
- 6884319
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 61:6; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360102 -- Metals & Alloys-- Structure & Phase Studies
360104* -- Metals & Alloys-- Physical Properties
ALLOYS
BACKSCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTAL-PHASE TRANSFORMATIONS
DIAGRAMS
DISPERSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
FABRICATION
FILMS
MICROSCOPY
MIXTURES
PHASE DIAGRAMS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
SCATTERING
SILICIDES
SILICON ALLOYS
SILICON COMPOUNDS
SOLID SOLUTIONS
SOLUTIONS
TANTALUM COMPOUNDS
TANTALUM SILICIDES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN ALLOYS
TUNGSTEN COMPOUNDS
TUNGSTEN SILICIDES