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Absence of negative ion effects during on-axis single target sputter depositions of Y-Ba-Cu-O thin films on Si (100)

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.102845· OSTI ID:6884154
; ;  [1]
  1. Kurt J. Lesker Company, 1515 Worthington Avenue, Clairton, Pennsylvania 15025 (US)
Stoichiometric thin films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} have been deposited on (100) silicon substrates by {ital on}-{ital axis} single target magnetron sputtering. The effect of oxygen resputtering was minimized through the use of much stronger than usual magnetic assemblies in the source. A magnet assembly incorporating NdB and NdFeB magnets produced a magnetic field above the target twice as large as the one produced by a standard SmCo magnet assembly. This allows for the use of lower operating voltages and a better electron racetrack confinement, resulting in little or no oxygen resputtering. We have obtained stoichiometric or near-stoichiometric films on silicon both by dc and rf magnetron techniques at a variety of sputtering pressures and target to substrate distances.
OSTI ID:
6884154
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:25; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English