Characterization of electron beam damage in oxidized silicon using thermally stimulated exoelectron emission

Journal Article · Tue May 01 00:00:00 EDT 1990 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)

DOI:https://doi.org/10.1116/1.576763· OSTI ID:6881025

Xiong-Skiba, P; Carroll, D L; Doering, D L ^[1]

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1. Department of Physics, Wesleyan University, CT (USA)

Silicon dioxide thin films grown on {ital p}-type Si(111) wafers were exposed to electron beam irradiation ranging from 1 to 4 keV in energy. Subsequent heating of the samples resulted in thermally stimulated exoelectron emission (TSEE) with several peaks in the emission intensity as a function of temperature. Peaks with temperatures below 450 {degree}C occurred at a fixed temperature for a given oxide, but varied as a function of oxide thickness. This emission is thought to be related to electron desorption from shallow trap states or energetic defects in the near surface region of the oxide and some impurity trap states in the bulk. A high temperature peak was observed which varied in time during heating as a function of sample temperature. This suggests a diffusion limited process where physical defects such as vacancies or interstitials must migrate to the surface to produce emission. The energy and thickness dependence of these emission states are related to the creation of defects and excited states in the thin film and the interaction of these states with the Si substrate.

• OSTI ID: 6881025
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Vol. 8:3; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON OXIDES
PHYSICAL RADIATION EFFECTS
CRYSTAL DEFECTS
ELECTRON BEAMS
EXOELECTRONS
KEV RANGE 01-10
THICKNESS
THIN FILMS
BEAMS
CHALCOGENIDES
CRYSTAL STRUCTURE
DIMENSIONS
ELECTRONS
ELEMENTARY PARTICLES
ENERGY RANGE
FERMIONS
FILMS
KEV RANGE
LEPTON BEAMS
LEPTONS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
RADIATION EFFECTS
SILICON COMPOUNDS
360206* - Ceramics
Cermets
& Refractories- Radiation Effects