Coupled resonator vertical-cavity laser diode

Journal Article · Mon Nov 01 00:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.125220· OSTI ID:687986

Fischer, A J; Choquette, K D; Chow, W W; Hou, H Q; Geib, K M ^[1]

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1. Center for Compound Semiconductor Science and Technology, Sandia National Labs, Albuquerque, New Mexico 87185 (United States)

We report the operation of an electrically injected monolithic coupled resonator vertical-cavity laser which consists of an active cavity containing In{sub x}Ga{sub 1{minus}x}As quantum wells optically coupled to a passive GaAs cavity. This device demonstrates modulation characteristics arising from dynamic changes in the coupling between the active and passive cavities. A composite mode theory is used to model the output modulation of the coupled resonator vertical-cavity laser. It is shown that the laser intensity can be modulated by either forward or reverse biasing the passive cavity. Under forward biasing, the modulation is due to carrier induced changes in the refractive index, while for reverse bias operation the modulation is caused by field dependent cavity enhanced absorption. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 687986
• Journal Information: Applied Physics Letters, Vol. 75, Issue 19; Other Information: PBD: Nov 1999
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR LASERS
OPERATION
GALLIUM ARSENIDES
LASER CAVITIES
REFRACTIVE INDEX
ELECTRIC FIELDS
COUPLING