Coupled Resonator Vertical Cavity Laser Diode

Journal Article · Thu Sep 16 00:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1109/LEOSST.1999.794714· OSTI ID:12676

CHOQUETTE, KENT D; CHOW, WENG W; FISCHER, ARTHUR J; GEIB, KENT M; HOU, HONG Q

We report the operation of an electrically injected monolithic coupled resonator vertical cavity laser which consists of an active cavity containing In{sub x}Ga{sub 1{minus}x}As quantum wells optically coupled to a passive GaAs cavity. This device demonstrates novel modulation characteristics arising from dynamic changes in the coupling between the active and passive cavities. A composite mode theory is used to model the output modulation of the coupled resonator vertical cavity laser. It is shown that the laser intensity can be modulated by either forward or reverse biasing the passive cavity. Under forward biasing, the modulation is due to carrier induced changes in the refractive index, while for reverse bias operation the modulation is caused by field dependent cavity enhanced absorption.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 12676
• Report Number(s): SAND99-2409J; TRN: AH200120%%382
• Journal Information: Applied Physics Letters, Other Information: Submitted to Applied Physics Letters; PBD: 16 Sep 1999
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
MODULATION
REFRACTIVE INDEX
RESONATORS
GALLIUM ARSENIDES
INDIUM ARSENIDES
DESIGN
SEMICONDUCTOR DIODES
ABSORPTION
VERTICAL CAVITY SURFACE EMITTING LASERS
VCSEL
COUPLED RESONATOR
COUPLED CAVITY