Surface superconductivity and the metal-oxide-semiconductorsystem

Journal Article · Mon Oct 06 04:00:00 EDT 1980 · Phys. Rev. Lett.; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.45.1203· OSTI ID:6876701

Hanke, W; Kelly, M J

Phonon-mediated and dynamically screened interactions between inversion-layer electrons in metal-oxide-semiconductor devices are studied. A numerical solution of the superconducting gap equation in the weak-coupling limit as a function of electron density for the Si(111)-SiO/sub 2/ system is given. Results are obtained for T/sub c/ which demonstrate that at high densities (with T/sub c/< or approx. =10 mK), pairing is dominated by intervalley phonon exchange, whereas at low densities it is essentially due to exchange of electronic (plasmon, electron-hole) excitations.

• Research Organization: Max-Planck-Institut fuer Festkoerperforschung, D-7000 Stuttgart 80, Federal Republic of Germany
• OSTI ID: 6876701
• Journal Information: Phys. Rev. Lett.; (United States), Journal Name: Phys. Rev. Lett.; (United States) Vol. 45:14; ISSN PRLTA
• Country of Publication: United States
• Language: English

Related Subjects

656100* -- Condensed Matter Physics-- Superconductivity
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHALCOGENIDES
EFFECTIVE MASS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON DENSITY
ELEMENTS
ENERGY GAP
EXCITONS
FUNCTIONS
INTERACTIONS
MASS
MATRIX ELEMENTS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHONONS
PHYSICAL PROPERTIES
PLASMONS
QUASI PARTICLES
SCREENING
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SUPERCONDUCTIVITY
THERMODYNAMIC PROPERTIES
TRANSISTORS
TRANSITION TEMPERATURE
WAVE FUNCTIONS