Surface superconductivity and the MOS system

Journal Article · Thu Jan 01 04:00:00 EST 1981 · Phys. Rev., B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.23.112· OSTI ID:6742429

Kelly, M J; Hanke, W

We solve the superconducting gap equation in the weak-coupling approximation for the electronic quasiparticles in metal-oxide-semiconductor devices, paying particular attention to the effects of the proximity of a surface on (a) the phonon-mediated and (b) screened Coulomb interactions between electrons. The frequency-dependent kernel is calculated using effective-mass-model wave functions and energies, and a microscopic description of the screening for the Si(111)-SiO/sub 2/ system, in several respects the most favorable Si system. The value of T/sub C/ over the wide range of accessible electron densities is obtained by a matrix-inversion technique applied to the gap integral equation. Values of approx.10 mK are predicted at r/sub s/=1(approx.5 x 10/sup 12/ cm/sup -2/) with the intervalley-phonon-mediated electron-electron interaction dominant at this density. Vertex corrections, fluctuation phenomena (crucial in this quasi-two-dimensional system), and strong-coupling corrections are considered, as are the possibilities of devices fabricated from other materials.

• Research Organization: Max-Planck-Institut fuer Festkorperforschung, 7000 Stuttgart 80, Heisenberstrasse 1, Federal Republic of Germany
• OSTI ID: 6742429
• Journal Information: Phys. Rev., B: Condens. Matter; (United States), Journal Name: Phys. Rev., B: Condens. Matter; (United States) Vol. 23:1; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHALCOGENIDES
EFFECTIVE MASS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON-ELECTRON COUPLING
ELEMENTS
ENERGY GAP
MASS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PROXIMITY EFFECT
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SUPERCONDUCTIVITY
SURFACE PROPERTIES
TRANSISTORS