Buried transverse-junction stripe laser for optoelectronic-integrated circuits

Journal Article · Fri May 15 00:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.338313· OSTI ID:6875816

Ohta, J; Kuroda, K; Mitsunaga, K; Kyuma, K; Hamanaka, K; Nakayama, T

A buried transverse-junction stripe (TJS) laser, a suitable laser diode for integration, has been fabricated using molecular-beam epitaxial growth. The fundamental characteristics of the laser were as good as those of a conventional TJS laser. We have also demonstrated a fabrication process for the laser that is compatible with that for metal-semiconductor field-effect transistors (MESFETs)= to be monolithically integrated. The characteristics of the MESFETs fabricated on substrates processed for the laser were the same as those fabricated on virgin substrates when such processed substrates were etched 2 ..mu..m deep.

• Research Organization: Central Research Laboratory, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
• OSTI ID: 6875816
• Journal Information: J. Appl. Phys.; (United States), Vol. 61:10
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
INTEGRATED CIRCUITS
FIELD EFFECT TRANSISTORS
SEMICONDUCTOR LASERS
FABRICATION
ETCHING
MOLECULAR BEAM EPITAXY
ELECTRONIC CIRCUITS
EPITAXY
LASERS
MICROELECTRONIC CIRCUITS
SEMICONDUCTOR DEVICES
SURFACE FINISHING
TRANSISTORS
420300* - Engineering- Lasers- (-1989)