Injection traveling-wave laser amplifier based on a (GaAl)As double heterostructure

Journal Article · Wed Feb 01 04:00:00 EST 1984 · Sov. J. Quant. Electron. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1070/QE1984v014n02ABEH004857· OSTI ID:6875717

Goldobin, I S; Luk'yanov, V N; Solodkov, A F; Tabunov, V P; Yakubovich, S D

Theoretical and experimental investigations were made of single-pass amplification of narrow-band optical signals in resonator-free stripe heterostructures operated at room temperature. The following optophysical characteristics of laser amplifiers of this type were recorded: the maximum gain was 26 dB; the output signal/background ratio was up to 7 dB without spectral selection and up to 24 dB when an output filter with a pass band 0.1 nm wide was used; the sensitivity was of the order of 100 nW; the output signal power was up to 20 mW; the linear operation range was in excess of 20 dB; the response time in the linear region was less than 1 nsec. The experimental results were in satisfactory agreement with calculations.

• Research Organization: All-Union Scientific-Research Institute of Optophysical Measurements, Moscow
• OSTI ID: 6875717
• Journal Information: Sov. J. Quant. Electron. (Engl. Transl.); (United States), Journal Name: Sov. J. Quant. Electron. (Engl. Transl.); (United States) Vol. 14:2; ISSN SJQEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
OPERATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SENSITIVITY