Determination of the parameters of injection laser amplifiers based on GaAlAs heterostructures from superluminescence characteristics

Journal Article · Tue Jun 01 04:00:00 EDT 1982 · Sov. J. Quant. Electron. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1070/QE1982v012n06ABEH005228· OSTI ID:6593589

Goldobin, I S; Semenov, A T; Tabunov, V P; Yakubovich, S D

A modified method for the determination of the amplifying characteristics of active media from the dependence of the amplified spontaneous radiation (superluminescence) spectrum on the geometry of the active region was applied to stripe heterolasers which had no feedback. The spectral dependences were obtained for the main parameters of laser amplifiers: the gain, sensitivity, and dynamic range of linear amplification of a narrow-band input signal. These parameters of heterojunction amplifiers were practically as good as those of homostructure amplifiers operating at cryogenic temperatures.

• Research Organization: All-Union Scientific-Research Institute of Optophysical Measurements, Moscow
• OSTI ID: 6593589
• Journal Information: Sov. J. Quant. Electron. (Engl. Transl.); (United States), Journal Name: Sov. J. Quant. Electron. (Engl. Transl.); (United States) Vol. 12:6; ISSN SJQEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
EMISSION
ENERGY-LEVEL TRANSITIONS
GAIN
HETEROJUNCTIONS
JUNCTIONS
LASERS
LUMINESCENCE
PHOTON EMISSION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SENSITIVITY
SPECTRAL RESPONSE
STIMULATED EMISSION
SUPERRADIANCE