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Title: DOE/JPL advanced thermionic technology program. Progress report No. 45, October, November, December 1980

Technical Report ·
DOI:https://doi.org/10.2172/6874550· OSTI ID:6874550

This report covers progress made during the three-month period from October through December 1980. During this period, significant accomplishments include: (1) continuing stable output from the combustion life test of the one-inch diameter hemispherical silicon carbide diode (Converter No. 239) at an emitter temperature of 1730 K for a period of over 4200 hours; (2) construction of four diode module completed; (3) favorable results obtained from TAM combustor-gas turbine system analyses; (4) a FERP work function of 2.3 eV was obtained with the W(100)-O-Zr-C electrode; and (5) the average minimum barrier index of the last six research diodes built with sublimed molybdenum oxide collectors was 2.0 eV.

Research Organization:
Thermo Electron Corp., Waltham, MA (USA)
DOE Contract Number:
AC02-76ER11291
OSTI ID:
6874550
Report Number(s):
TE-4258/4247-149-81
Country of Publication:
United States
Language:
English