Theory of nonlinear absorption in InSb spin-flip laser

Journal Article · Thu Jan 01 04:00:00 EST 1981 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.328441· OSTI ID:6874306

Nee, T; Scully, M O

The strong transient optical absorption in n-InSb Raman spin-flip laser device at 2 /sup 0/K was interpreted due to the intense laser-generated hot conduction electrons. We present the microscopic theoretical calculation for this nonlinear and nonequilibrium optical effect. By assuming the time-dependent functions for electronic temperature and Fermi energy, the time evolution of the nonequilibrium hot electron distribution during the pulsed laser irradiation is calculated.

• Research Organization: Department of Physics and Institute of Physics and Astronomy, National Central University, Chung-li, Taiwan 320, Republic of China
• OSTI ID: 6874306
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION
ALLOYS
ANTIMONY ALLOYS
CHARGE CARRIERS
DISTRIBUTION
ELECTRON TEMPERATURE
ELECTRONS
ELEMENTARY PARTICLES
ENERGY LEVELS
FERMI LEVEL
FERMIONS
INDIUM ALLOYS
INTERMETALLIC COMPOUNDS
IRRADIATION
LASERS
LEPTONS
MATHEMATICAL MODELS
NONLINEAR PROBLEMS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
PULSES
RAMAN EFFECT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPATIAL DISTRIBUTION
SPIN FLIP
TIME DEPENDENCE
TRANSIENTS
ULTRALOW TEMPERATURE