Time-resolved pump depletion in n-InSb Raman spin-flip laser

Journal Article · Thu Apr 15 04:00:00 EST 1976 · Appl. Phys. Lett., v. 28, no. 8, pp. 442-444

DOI:https://doi.org/10.1063/1.88791· OSTI ID:4046636

Cantrell, C D; Figueira, J F; Scott, J F; Scully, M O

Analysis of the transient depletion of a 10.6-$mu$m laser beam in n-InSb at 2 K observed by Figueira, Cantrell, Rink, and Forman shows that the observed depletion is not due to causes such as lattice heating, depletion by other nonlinear processes, or optical damage. Simple estimates are presented which show that a 10.6-$mu$m laser pulse of the intensity and duration of that used by Figueira et al. will heat the conduction electrons very strongly, leading to a transient increase in carrier concentration and conductivity, and a corresponding increase in optical absorption. (AIP)

• Research Organization: Los Alamos Scientific Laboratory, University of California, Los Alamos, New Mexico 87545
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-028958
• OSTI ID: 4046636
• Journal Information: Appl. Phys. Lett., v. 28, no. 8, pp. 442-444, Journal Name: Appl. Phys. Lett., v. 28, no. 8, pp. 442-444; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

*SEMICONDUCTOR LASERS-- OPTICAL PUMPING
420300* --Engineering--Lasers
ABSORPTION
ANTIMONY ALLOYS
CHARGE CARRIERS
ELECTRIC CONDUCTIVITY
INDIUM ALLOYS
MAGNETIC FIELDS
N42210* --Engineering--Facilities & Equipment--Lasers
PHONONS
RAMAN EFFECT
RECOMBINATION
SPIN FLIP