Infrared Raman probing of deep-lying damaged layers in hydrogen-implanted GaAs

Journal Article · Mon Feb 02 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98241· OSTI ID:6870162

Anastassakis, E; Tatarkiewicz, J

We report on the use of a cw Nd:yttrium aluminum garnet infrared laser to probe by Raman scattering the damaged layers of GaAs implanted with high-energy(--2 MeV) protons and deuterons. Such layers are too deep into the material to be probed by visible light. As the implanted area is approached laterally, we observe a gradual decrease in the scattering intensity of the longitudinal optical and transverse optical phonons and a downward shift of their frequencies. These effects are attributed to defect-induced absorption and lattice strains. The results demonstrate the advantages of the technique for studying the damage in deeply buried layers of radiation-modified materials.

• Research Organization: Max--Planck-Institut fuer Festkoerperforschung, Heisenbergstra US e 1, D-7000 Stuttgart 80, Federal Republic of Germany
• OSTI ID: 6870162
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
DAMAGE
DEUTERON BEAMS
DEUTERONS
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFRARED SPECTRA
ION BEAMS
ION IMPLANTATION
MEV RANGE
MEV RANGE 01-10
NUCLEON BEAMS
PARTICLE BEAMS
PHONONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTON BEAMS
QUASI PARTICLES
RADIATION EFFECTS
RAMAN EFFECT
RAMAN SPECTRA
SPECTRA