Plasma-induced damage of GaAs [ital pn]-junction diodes using electron cyclotron resonance generated Cl[sub 2]/Ar, BCl[sub 3]/Ar, Cl[sub 2]/BCl[sub 3]/Ar, and SiCl[sub 4]/Ar plasmas

Journal Article · Sat Dec 31 23:00:00 EST 1994 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.587980· OSTI ID:6870011

Shul, R J; Lovejoy, M L; Hetherington, D L; Rieger, D J; Klem, J F ^[1]; Melloch, M R ^[2]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
2. School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

Plasma-induced etch damage often degrades the electrical and optical performance of III--V high-density integrated circuits and photonic devices. We have investigated the etch-induced damage of electron cyclotron resonance (ECR) generated plasmas on the electrical performance of mesa-isolated GaAs [ital pn]-junction diodes. Cl[sub 2]/Ar, BCl[sub 3]/Ar, Cl[sub 2]/BCl[sub 3]/Ar, and SiCl[sub 4]/Ar ECR plasmas at ion energies ranging from 10 to 200 eV were studied. Diodes fabricated under low dc-bias ([le]100 V) etch conditions yielded low reverse-bias currents which were comparable to wet-chemical-etched devices. As the dc bias was increased, the diodes showed significantly higher reverse-bias currents indicating plasma-induced sidewall damage of the [ital pn]-junction. Variations in diode reverse-bias leakage currents are reported as a function of plasma parameters and chemistries.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 6870011
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 13:1; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARGON
ARSENIC COMPOUNDS
ARSENIDES
BROMINE CHLORIDES
BROMINE COMPOUNDS
CHLORIDES
CHLORINE
CHLORINE COMPOUNDS
CYCLOTRON RESONANCE
DAMAGE
ELECTRICAL PROPERTIES
ELECTRON CYCLOTRON-RESONANCE
ELEMENTS
ENERGY RANGE
ETCHING
EV RANGE
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GASES
HALIDES
HALOGEN COMPOUNDS
HALOGENS
JUNCTIONS
NONMETALS
P-N JUNCTIONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PLASMA
PNICTIDES
RADIATION EFFECTS
RARE GASES
RESONANCE
SEMICONDUCTOR JUNCTIONS
SILICON CHLORIDES
SILICON COMPOUNDS
SILICON HALIDES
SURFACE FINISHING