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Title: Scintillation detection with large-area reach-through avalanche photodiodes

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6869738

Silicon avalanche photodiodes of the ''reachthrough'' type have been used as scintillation detectors with device performance closely approaching that of PMT's. The device consists of a 6X6mm diode with a 5X5mm photosensitive area in a 6.7X6.7X2.0mm package which is suitable for mounting in an array. Typical characteristics at room temperature are: quantum efficiency =50% at lambda=415nm; surface dark current <200nA; bulk dark-current (before gain) <1nA; noise current (at optimum gain of 20 to 50) <1pA/Hz/SUP 1/2/; response time <5ns; capacitance =21pF; biasing voltage =200-400 Volts. When coupled to a NaI(T1) scintillator (9X9X38mm) photo-peak resolutions (FWHM) for 662keV radiation of 10.4% at 21/sup 0/C and 9.8% at 0/sup 0/C were measured. The measured noise equivalent primary charge of one detector at a gain of 50 was 121 electrons (51 electrons rms) at room temperature. The significance of this new detector to high resolution imaging systems and detector arrays is discussed.

Research Organization:
RCA Inc., Electro-Optics, Ste-Anne-de-Bellevue, Quebec, H9X 3L3
OSTI ID:
6869738
Report Number(s):
CONF-831015-
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Vol. 31:1; Conference: Nuclear science symposium, San Francisco, CA, USA, 19 Oct 1983
Country of Publication:
United States
Language:
English

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