A short-wavelength selective reach-through avalanche photodiode

Journal Article · Sat Jun 01 04:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.507062· OSTI ID:277666

McIntyre, R J; Webb, P P; Dautet, H

A new reach-through avalanche photodiode, designed for use with sources of short-wavelength light such as scintillators, is described. The device has a double junction p{sup +}-p-n-p{sup {minus}}-n{sup +} structure in which the central three layers, which comprise about 99% of the device thickness, are fully depleted. The p{sup +} light-entry surface extends across the whole device and can be placed in contact with a scintillator. The multiplying p-n junction is buried and is located about 4 {micro}m below the p{sup +}-layer so that only primary photo-electrons generated by short-wavelength (i.e., strongly absorbed) light are fully multiplied. The p{sup {minus}}-n{sup +} junction, or array of junctions, is located at the back of the wafer and is surrounded by a guard-ring. Typical characteristics for a device 120 {micro}m thick and having a 25 mm{sup 2} sensitive area, are a quantum efficiency (Q.E.) of 80% at 480 nm, a capacitance of 30 pF, operating voltage of <500V, a speed of response of {approximately}3 ns, a noise current of less than 2 pA/Hz{sup 1/2} at a gain of 100, and an effective k value of .030.

• OSTI ID: 277666
• Report Number(s): CONF-951073--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DEPLETION LAYER
DESIGN
ELECTRIC POTENTIAL
PERFORMANCE
PHOTODIODES
SCINTILLATOR-PHOTODIODE DETECTORS
SEMICONDUCTOR JUNCTIONS