Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa){sub 1{minus}x}Ti{sub x}O{sub 3} (x=0{endash}0.3) relaxor ferroelectric thin films on LaNiO{sub 3} electrode buffered Si

Journal Article · Fri Oct 01 00:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.125056· OSTI ID:686841

Lin, C H; Lee, S W; Chen, H ^[1]; Wu, T B ^[2]

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1. Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of (China)

Highly (100) textured Pb(ScTa){sub 1{minus}x}Ti{sub x}O{sub 3} (x=0{endash}0.3) thin films were grown on LaNiO{sub 3}/Pt/Ti electrode-coated Si substrate using metal-organic chemical vapor deposition at 685thinsp{degree}C. Ti addition was introduced to modify the dielectric properties. Diffuse phase transition, typical of relaxor ferroelectrics was noticed. As Ti content increased from 0{percent} to 30{percent}, the phase transition temperature (T{sub max}) gradually shifted from {minus}10 to 120thinsp{degree}C with the dielectric constant at T{sub max} increased from 1397 to 1992 (1 kHz). Loss tangent values are generally below 0.025. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 686841
• Journal Information: Applied Physics Letters, Vol. 75, Issue 16; Other Information: PBD: Oct 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
LEAD COMPOUNDS
X-RAY DIFFRACTION
SCANNING ELECTRON MICROSCOPY
PERMITTIVITY
FERROELECTRIC MATERIALS
THIN FILMS
TEXTURE
CHEMICAL VAPOR DEPOSITION
MICROSTRUCTURE
LEAD OXIDES
TITANATES
SCANDIUM OXIDES
TANTALATES
SILICON
LANTHANUM OXIDES
NICKEL OXIDES
STRUCTURAL CHEMICAL ANALYSIS
PHASE TRANSFORMATIONS
DIELECTRIC PROPERTIES