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Title: Domain structure and electrical properties of highly textured PbZr{sub x}Ti{sub 1-x}O{sub 3} thin films grown on LaNiO{sub 3}-electrode-buffered Si by metalorganic chemical vapor deposition

Journal Article · · Journal of Materials Research
DOI:https://doi.org/10.1557/JMR.2000.0020· OSTI ID:20215815
 [1];  [1];  [1];  [1];  [2];  [3]
  1. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China (China)
  3. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

Thin films of highly (100) textured fine-grain (lateral grain size congruent with 0.1 to 0.15 {mu}m) PbZr{sub x}Ti{sub 1-x}O{sub 3} (PZT) (x=0 to 0.7) were grown on conductive perovskite LaNiO{sub 3}-buffered platinized Si substrates by metalorganic chemical vapor deposition. Domain configuration and crystalline orientation were studied using x-ray diffraction and transmission electron microscopy. The predominant domain boundaries of Ti-rich tetragonal-phase PZT and Zr-rich rhombohedral-phase PZT were found to be on the (110) planes and (100) planes, respectively. The equilibrium domain widths were observed and estimated numerically on the basis of transformation strain, grain size, and domain boundary energy. The peak value of the dielectric constant was 790 near the morphotropic boundary. Hysteresis behavior of these PZT thin films was demonstrated. A decrease in coercive field with the increment of Zr content was found; this variation was attributed to domain density and the multiplicity of polarization axes. Furthermore, the low leakage current (J{<=}5x10{sup -7} A/cm{sup 2} at V=4 V) was observed for all samples, and the involvement of several possible conduction mechanisms was suggested. (c) 2000 Materials Research Society.

OSTI ID:
20215815
Journal Information:
Journal of Materials Research, Vol. 15, Issue 1; Other Information: PBD: Jan 2000; ISSN 0884-2914
Country of Publication:
United States
Language:
English