Domain structure and electrical properties of highly textured PbZr{sub x}Ti{sub 1-x}O{sub 3} thin films grown on LaNiO{sub 3}-electrode-buffered Si by metalorganic chemical vapor deposition

Journal Article · Sat Jan 01 04:00:00 EST 2000 · Journal of Materials Research

DOI:https://doi.org/10.1557/JMR.2000.0020· OSTI ID:20215815

Lin, C H ^[1]; Yen, B M ^[1]; Kuo, H C ^[1]; Chen, Haydn ^[1]; Wu, T B ^[2]; Stillman, G E ^[3]

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1. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China (China)
3. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

Thin films of highly (100) textured fine-grain (lateral grain size congruent with 0.1 to 0.15 {mu}m) PbZr{sub x}Ti{sub 1-x}O{sub 3} (PZT) (x=0 to 0.7) were grown on conductive perovskite LaNiO{sub 3}-buffered platinized Si substrates by metalorganic chemical vapor deposition. Domain configuration and crystalline orientation were studied using x-ray diffraction and transmission electron microscopy. The predominant domain boundaries of Ti-rich tetragonal-phase PZT and Zr-rich rhombohedral-phase PZT were found to be on the (110) planes and (100) planes, respectively. The equilibrium domain widths were observed and estimated numerically on the basis of transformation strain, grain size, and domain boundary energy. The peak value of the dielectric constant was 790 near the morphotropic boundary. Hysteresis behavior of these PZT thin films was demonstrated. A decrease in coercive field with the increment of Zr content was found; this variation was attributed to domain density and the multiplicity of polarization axes. Furthermore, the low leakage current (J{<=}5x10{sup -7} A/cm{sup 2} at V=4 V) was observed for all samples, and the involvement of several possible conduction mechanisms was suggested. (c) 2000 Materials Research Society.

• OSTI ID: 20215815
• Journal Information: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 1 Vol. 15; ISSN JMREEE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
DIELECTRIC PROPERTIES
DOMAIN STRUCTURE
ELECTRIC CONDUCTIVITY
EXPERIMENTAL DATA
FERROELECTRIC MATERIALS
LEAD OXIDES
MICROSTRUCTURE
SILICON
SUBSTRATES
TEXTURE
THIN FILMS
TITANIUM OXIDES
ZIRCONIUM OXIDES