Model etch profiles for ion energy distribution functions in an inductively coupled plasma reactor
- Department of Electrical Engineering, Washington University, St. Louis, Missouri 63130 (United States)
- Laser, Optics, and Remote Sensing Department, Sandia National Laboratories, Albuquerque, New Mexico 87185-1423 (United States)
Rectangular trench profiles are modeled with analytic etch rates determined from measured ion distribution functions. The pattern transfer step for this plasma etch is for trilayer lithography. Argon and chlorine angular ion energy distribution functions measured by a spherical collector ring analyzer are fit to a sum of drifting Maxwellian velocity distribution functions with anisotropic temperatures. The fit of the model ion distribution functions by a simulated annealing optimization procedure converges adequately for only two drifting Maxwellians. The etch rates are proportional to analytic expressions for the ion energy flux. Numerical computation of the etch profiles by integration of the characteristic equations for profile points and connection of the profiles points is efficient. {copyright} {ital 1999 American Vacuum Society.}
- OSTI ID:
- 686529
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 5 Vol. 17; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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