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Title: Model Etch Profiles for Ion Energy Distribution Functions in an Inductively Coupled Plasma Reactor

Abstract

Rectangular trench profiles are modeled with analytic etch rates determined from measured ion distribution functions. The pattern transfer step for this plasma etch is for trilayer lithography. Argon and chlorine angular ion energy distribution functions measured by a spherical collector ring analyzer are fit to a sum of drifting Maxwellian velocity distribution functions with anisotropic temperatures. The fit of the model ion distribution functions by a simulated annealing optimization procedure converges adequately for only two drifting Maxwellians. The etch rates are proportional to analytic expressions for the ion energy flux. Numerical computation of the etch profiles by integration of the characteristic equations for profile points and connection of the profiles points is efficient.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
Sponsoring Org.:
USDOE
OSTI Identifier:
2371
Report Number(s):
SAND98-2786J
ON: DE00002371
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Plasma; Ions; Angular Distribution; Energy Spectra; Semiconductor Materials; Etching; Mathematical Models; Experimental Data; Theoretical Data

Citation Formats

Abraham-Shrauner, B., Chen, W., and Woodworth, J.R. Model Etch Profiles for Ion Energy Distribution Functions in an Inductively Coupled Plasma Reactor. United States: N. p., 1998. Web.
Abraham-Shrauner, B., Chen, W., & Woodworth, J.R. Model Etch Profiles for Ion Energy Distribution Functions in an Inductively Coupled Plasma Reactor. United States.
Abraham-Shrauner, B., Chen, W., and Woodworth, J.R. Mon . "Model Etch Profiles for Ion Energy Distribution Functions in an Inductively Coupled Plasma Reactor". United States. https://www.osti.gov/servlets/purl/2371.
@article{osti_2371,
title = {Model Etch Profiles for Ion Energy Distribution Functions in an Inductively Coupled Plasma Reactor},
author = {Abraham-Shrauner, B. and Chen, W. and Woodworth, J.R.},
abstractNote = {Rectangular trench profiles are modeled with analytic etch rates determined from measured ion distribution functions. The pattern transfer step for this plasma etch is for trilayer lithography. Argon and chlorine angular ion energy distribution functions measured by a spherical collector ring analyzer are fit to a sum of drifting Maxwellian velocity distribution functions with anisotropic temperatures. The fit of the model ion distribution functions by a simulated annealing optimization procedure converges adequately for only two drifting Maxwellians. The etch rates are proportional to analytic expressions for the ion energy flux. Numerical computation of the etch profiles by integration of the characteristic equations for profile points and connection of the profiles points is efficient.},
doi = {},
journal = {Journal of Applied Physics},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {12}
}