Edge- and surface-emitting distributed Bragg reflector laser with multiquantum well active/passive waveguides

Journal Article · Mon Feb 02 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97668· OSTI ID:6865101

Kojima, K; Noda, S; Mitsunaga, K; Kyuma, K; Hamanaka, K; Nakayama, T

A novel AlGaAs/GaAs distributed Bragg reflector laser utilizing a multiquantum well structure both as an active waveguide and as a low loss passive waveguide was fabricated. The threshold current was 102 mA at room temperature, and the differential quantum efficiency for the edge- and surface-emitted light was 16% and 3.7%, respectively. No mode hopping was observed in a temperature range of 35 K. A 0.17/sup 0/ x 17/sup 0/ far-field pattern was obtained for the surface-emitted light.

• Research Organization: Central Research Laboratory, Mitsubishi Electric Corporation, 1-1 Tsukaguchi-honmachi 8-chome, Amagasaki, Hyogo 661, Japan
• OSTI ID: 6865101
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
PNICTIDES
QUANTUM EFFICIENCY
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
WAVEGUIDES