Continuous wave operation of a surface-emitting AlGaAs/GaAs multiquantum well distributed Bragg reflector laser
Journal Article
·
· Appl. Phys. Lett.; (United States)
The first cw operation of an AlGaAs/GaAs distributed Bragg reflector laser was achieved at room temperature with a threshold current as low as 38 mA. Surface emission exceeding 4 mW was obtained with an external differential quantum efficiency of 9% and a beam divergence of 0.17/sup 0/ x 10/sup 0/. A two-dimensional laser array with 3 x 4 gratings was also fabricated and an output power exceeding 500 mW was obtained under pulsed condition.
- Research Organization:
- Central Research Laboratory, Mitsubishi Electric Corporation, 1-1 Tsukaguchi-honmachi 8-chome, Amagasaki, Hyogo 661, Japan
- OSTI ID:
- 6537927
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:24; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
DATA
EFFICIENCY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
PERFORMANCE
PNICTIDES
POWER
POWER RANGE MILLI W
QUANTUM EFFICIENCY
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
DATA
EFFICIENCY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
PERFORMANCE
PNICTIDES
POWER
POWER RANGE MILLI W
QUANTUM EFFICIENCY
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS