Carrier-induced change in refractive index of InP, GaAs, and InGaAsP

Journal Article · Mon Jan 01 04:00:00 EST 1990 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/3.44924· OSTI ID:6860566

Bennett, B R ^[1]; Soref, R A ^[2]; Del Alamo, J A ^[3]

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1. Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (US)
2. Solid State Sciences Directorate, Rome Air Development Center, Hanscom Air Force Base, Bedford, MA (US)
3. Dept. of Electrical Engineering and Computer Science, Massachussets Institute of Technology, Cambridge, MA (US)

The authors have theoretically estimated the change in refractive index {Delta}{ital n} produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 10{sup 16}/cm{sup 3} to 10{sup 19}/cm{sup 3} and photon energies of 0.8 to 2.0 eV were considered. Predictions of {Delta}{ital n} are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10{sup {minus} 2} are predicted for carrier concentrations of 10{sup 18}/cm{sup 3}, suggesting that low-loss optical phase modulators and switches using carrier injection are feasible in these materials.

• OSTI ID: 6860566
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA) Vol. 26:1; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400500 -- Photochemistry
42 ENGINEERING
426002 -- Engineering-- Lasers & Masers-- (1990-)
ABSORPTION SPECTRA
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CARRIER MOBILITY
ELEMENTARY PARTICLES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GRADED BAND GAPS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER MATERIALS
MASSLESS PARTICLES
MATERIALS
MOBILITY
OPTICAL PROPERTIES
PHASE SHIFT
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTONS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SPECTRA