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U.S. Department of Energy
Office of Scientific and Technical Information

Photovoltaic mechanisms in polycrystalline thin-film silicon solar cells. Final report, July 31, 1979-September 30, 1980

Technical Report ·
OSTI ID:6853670
The overall goal of this program is to elucidate fundamental aspects of grain boundary influences on photocurrent collection and on opposing current mechanisms in polycrystalline silicon cells to allow achievement of at least 10% conversion efficiency at a cost of $0.30/peak watt or less (1975 $). Modeling efforts have resulted in Fourier and Bessel-Fourier series solutions for carrier transport in right cylindrical grains. Consistent differences were observed in the I-V behavior of Al-SiO/sub x/-pSi solar cells depending on the composition of HNO/sub 3/:HAc:HF used for chemical surface etching prior to barrier formation. Optimized grid designs were computer modeled for PN junctions, MIS and inversion layer solar cells, and results are discussed. Slices of polysilicon taken in sequence from the cast ingot which have very similar grain structure were identified. These correlated slices have been useful in studies of both chemical etch effects and plasma hydrogenation.
Research Organization:
Westinghouse Research and Development Center, Pittsburgh, PA (USA)
DOE Contract Number:
AC01-79ET23106
OSTI ID:
6853670
Report Number(s):
DOE/ET/23106-4
Country of Publication:
United States
Language:
English