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Investigation of photovoltaic mechanisms in polycrystalline thin-film solar cells. Final technical report: Volume 1, August 1, 1980-October 31, 1981

Technical Report ·
DOI:https://doi.org/10.2172/5357252· OSTI ID:5357252
The purpose of this work was to characterize and control grain boundary influences on the performance of solar cells fabricated in polycrystalline silicon. The most significant accomplishments were made using scanned-laser spot characterizations of grain boundary effects on photocurrent. We were able to modulate the peak photocurrent suppression at boundaries, obtaining values of 1% or less after plasma hydrogenation and of 40% or greater after certain high-temperature heat treatments, simulating the conditions of impurity diffusion for junction formation. Conventional DLTS measurements on Wacker SILSO polysilicon material revealed deep centers at a concentration of about 1 x 10/sup 13/ cm/sup -3/ having an energy similar to that for molybdenum. The center is probably not due to molybdenum, since such concentrations of that impurity would not allow good photovoltaic performance in the material. Problems encountered with implementing lateral DLTS measurements are discussed. Comparisons of behavior were made of current-voltage behavior in MIS and pn-junction barrier solar cells which were fabricated in polycrystalline silicon containing low (2 x 10/sup 13/ cm/sup -3/) and moderate (1 x 10/sup 14/ cm/sup -3/) concentrations of the lifetime-killing impurity titanium. Results are treated in terms of differences with regard to baseline cells, free of deliberately introduced impurity.
Research Organization:
Westinghouse Research and Development Center, Pittsburgh, PA (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5357252
Report Number(s):
SERI/TR-9233-1-T3-Vol.1; ON: DE82017683
Country of Publication:
United States
Language:
English