Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/]

Patent · Thu Oct 06 00:00:00 EDT 1983

OSTI ID:6853625

Osbourn, G C

An intrinsic semiconductor electro-optical device comprises a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8 to 12 ..mu..m. This radiation responsive p-n junction comprises a strained-layer superlattice (SLS) of alternating layers of two different III-V semiconductors. The lattice constants of the two semiconductors are mismatched, whereby a total strain is imposed on each pair of alternating semiconductor layers in the SLS structure, the proportion of the total strain which acts on each layer of the pair being proportional to the ratio of the layer thicknesses of each layer in the pair.

• DOE Contract Number: AC04-76DP00789
• Assignee: Dept. of Energy
• Patent Number(s): None
• Application Number: ON: DE84011294
• OSTI ID: 6853625
• Country of Publication: United States
• Language: English

Related Subjects

440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALLOYS
ANTIMONY ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
DETECTION
ELECTRO-OPTICAL EFFECTS
ELECTROMAGNETIC RADIATION
INDIUM ALLOYS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED RADIATION
MEASURING INSTRUMENTS
PNICTIDES
RADIATION DETECTORS
RADIATIONS
SEMICONDUCTOR DETECTORS
SUPERLATTICES