Positive-tone silylated, dry-developed, deep ultraviolet resist with 0. 2 [mu]m resolution

Journal Article · Tue Nov 01 00:00:00 EST 1994 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.587575· OSTI ID:6847393

Hutton, R S; Stein, S M; Boyce, C H; Cirelli, R A; Taylor, G N ^[1]; Baiocchi, F A; Kovalchick, J ^[2]; Wheeler, D R ^[3]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)
2. AT T Bell Laboratories, Allentown, Pennsylvania 18103 (United States)
3. Sandia National Laboratory, Albuquerque, New Mexico 87185 (United States)

This paper describes the development of a surface-imaging process for a positive-tone silylated, dry-developed bilayer resist which has 0.2 [mu]m resolution and an aspect ratio of 4.5 using deep-UV (248 nm) exposure. The many processing variables such as thermal treatment parameters, silylation conditions, and etching conditions were examined to determine their effects on lithographic performance in terms of resolution, feature size linearity, focus latitude, and sensitivity. Critical to the success of the process are: the bilayer structure which restricts diffusion of the Si, the use of a disilane reagent to increase the Si content of the masking layer, limiting migration of photogenerated acid by the appropriate choice of softbake and post-exposure bake temperatures, initial etching with an Ar/Cl[sub 2] mixture to remove the thin layer of silylated resist in the exposed areas, and employing CO[sub 2] instead of O[sub 2] as the etching gas to eliminate lateral etching of the features. With this process we have obtained good critical dimension linearity down to 0.25 [mu]m for bright-field and dark-field lines and spaces as well as isolated lines and isolated spaces. The dose required is [similar to]75 mJ/cm[sup 2] and the dose latitude is [plus minus]6%. Focus latitude is at least [plus minus]0.4 [mu]m. We also observe no environmental effects on sensitivity or resolution.

• OSTI ID: 6847393
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 12:6; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
INTEGRATED CIRCUITS
FABRICATION
ARGON
ASPECT RATIO
CARBON DIOXIDE
CHLORINE
ETCHING
PERFORMANCE
SILICON
SPATIAL RESOLUTION
ULTRAVIOLET RADIATION
CARBON COMPOUNDS
CARBON OXIDES
CHALCOGENIDES
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
FLUIDS
GASES
HALOGENS
MICROELECTRONIC CIRCUITS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
RADIATIONS
RARE GASES
RESOLUTION
SEMIMETALS
SURFACE FINISHING
665000* - Physics of Condensed Matter- (1992-)