MBE grown nitrides for high temperature electronics using conformal substrates. Final report, 15 September 1995--14 March 1999
Technical Report
·
OSTI ID:684728
During this project, GaN has been grown on lithium gallate with much improved structural quality, excellent optical properties and much improved electrical properties superior nitride properties resulted from a detailed investigation and understanding of the surface chemistry of LGO. As a polar material, LGO has a cation terminated (lithium and gallium face and an anion (oxygen) face). It was determined that nitride films grown on the anion face cracked and peeled where as films grown on the cation face are smooth and adherent. Having identified the proper face for growth and determined the upper limit of substrate temperatures, high quality growth of GaN on LGO was then possible.
- Research Organization:
- Georgia Inst. of Tech., School of Electrical Engineering, Atlanta, GA (United States)
- OSTI ID:
- 684728
- Report Number(s):
- AD-A--365565/XAB; CNN: Contract F49620-95-1-0527
- Country of Publication:
- United States
- Language:
- English
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