Wedged channel vertical junction silicon solar cell
Patent
·
OSTI ID:6838437
An improved vertical junction solar cell is provided which comprises a thin single-crystalline silicon chip having on one surface thereof a plurality of short channels etched therein in a desired array, the lenght ''el'' of the channels being related to the depth d of the channels by a relationship approximating d = l/2(SQRT 3). The resulting structure provides improved light utilization at end-of-life condition, conversion efficiency, mechanical strength and radiation resistance.
- Assignee:
- The United States of America as represented by the Secretary of the Air Force
- Patent Number(s):
- US 4420650
- OSTI ID:
- 6838437
- Country of Publication:
- United States
- Language:
- English
Similar Records
Hole matrix vertical junction solar cell
Hole matrix vertical junction solar cell
Advanced vertical junction solar cells
Patent
·
Tue Oct 11 00:00:00 EDT 1983
·
OSTI ID:5281893
Hole matrix vertical junction solar cell
Patent
·
Mon Mar 08 23:00:00 EST 1982
·
OSTI ID:5792945
Advanced vertical junction solar cells
Conference
·
Wed Aug 01 00:00:00 EDT 1984
· Proc., Intersoc. Energy Convers. Eng. Conf.; (United States)
·
OSTI ID:5820350