Watt-level millimeter-wave monolithic diode-grid frequency multipliers

Journal Article · Mon Aug 01 00:00:00 EDT 1988 · Rev. Sci. Instrum.; (United States)

DOI:https://doi.org/10.1063/1.1140150· OSTI ID:6838175

Hwu, R J; Jou, C F; Luhmann, Jr, N C; Lam, W W; Rutledge, D B; Hancock, B; Lieneweg, U; Maserjian, J; Streit, D C

Watt-level cw solid-state sources in the millimeter-wave region are needed for plasma diagnostics. Monolithic metal-grid arrays containing in excess of 1000 Schottky diodes have produced watt-level output at 66 GHz in a doubler configuration, in excellent agreement with the large-signal predictions of the frequency multiplication. Current efforts are concentrated on fabricating and developing arrays of a novel barrier-intrinsic-N/sup +/ (BIN) diode which promise increased performance in a tripler configuration. Initial tests will be made for a configuration where a tripling efficiency of 35% at an output frequency of 100 GHz is predicted. Eventual goals are monolithic BIN diode grids operating at 1 THz.

• Research Organization: Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90024
• OSTI ID: 6838175
• Journal Information: Rev. Sci. Instrum.; (United States), Journal Name: Rev. Sci. Instrum.; (United States) Vol. 59:8; ISSN RSINA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
700102* -- Fusion Energy-- Plasma Research-- Diagnostics
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
ELECTROMAGNETIC RADIATION
FABRICATION
FAR INFRARED RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFRARED RADIATION
PLASMA DIAGNOSTICS
PNICTIDES
RADIATIONS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES