Millimeter-wave monolithic barrier [ital n]-[ital n][sup +] diode grid frequency doubler

Journal Article · Mon Apr 05 00:00:00 EDT 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108615· OSTI ID:6713526

Qin, X; Domier, C; Luhmann, Jr, N C; Liu, H L; Chung, E; Sjogren, L ^[1]; Wu, W ^[2]

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1. Electrical Engineering Department, University of California at Los Angeles, Los Angeles, California 90024 (United States)
2. Silicon Systems, 14351 Myford Road, Tustin, California 92680 (United States)

A monolithic quasioptical frequency multiplier array, comprised of approximately 1760 Ga[sub 0.5]Al[sub 0.5]As/GaAs barrier [ital n]-[ital n][sup +] (BNN) diodes, has been successfully fabricated. The BNN diode, first fabricated in these studies, possesses strongly nonlinear capacitance-voltage ([ital C]-[ital V]) characteristics, thereby offering the potential for a highly efficient device for millimeter-wave frequency multiplication applications. A frequency doubled power of 2.1 W at 66 GHz has been observed with a conversion efficiency of 7.5%.

• OSTI ID: 6713526
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:14; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
EFFICIENCY
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
EPITAXY
FREQUENCY CONVERTERS
INTEGRATED CIRCUITS
JUNCTION DIODES
MICROELECTRONIC CIRCUITS
MICROWAVE RADIATION
MOLECULAR BEAM EPITAXY
POWER RANGE
POWER RANGE 01-10 W
RADIATION SOURCES
RADIATIONS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
WATT POWER RANGE