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Title: Role of lattice mismatch and surface chemistry in the formation of epitaxial semiconductor-insulator interfaces

Journal Article · · Physical Review, B: Condensed Matter; (USA)
 [1];  [2]
  1. Department of Physics, University of California, Berkeley, Berkeley, California 94720 (USA)
  2. Xerox Corporation, Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304 (USA)

The formation of SrF{sub 2}/Si(111) and Ge/CaF{sub 2}/Si(111) interfaces is studied with photoemission and compared to previous results for the CaF{sub 2}/Si(111) interface. The interface between SrF{sub 2} and Si(111) is found to be nonstoichiometric, similar to the interface between CaF{sub 2} and Si(111): the bonding is between Si and the cation, with a layer of fluorine missing at the interface. In the case of Ge growth on CaF{sub 2}/Si(111), a variety of effects are noted: The CaF{sub 2}/Si(111) valence-band offset is reduced by about 1 eV upon deposition of Ge at room temperature. The sticking coefficient of the Ge is significantly increased by preparing the CaF{sub 2} surface with electron bombardment to remove the top layer of fluorine. For both the irradiated and nonirradiated cases, annealing of thin room-temperature-deposited films resulted in Ge island formation.

OSTI ID:
6836809
Journal Information:
Physical Review, B: Condensed Matter; (USA), Vol. 41:12; ISSN 0163-1829
Country of Publication:
United States
Language:
English