Time-resolved reflectivity study of solid-phase epitaxial regrowth in relaxed and strained Si[sub 1-x]Ge[sub x] epilayers
Conference
·
OSTI ID:6828962
- Oak Ridge National Lab., TN (United States)
- Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering
The rate of solid-phase epitaxial regrowth was studied using time-resolved reflectivity in three different types of SiGe/Si epilayers amorphized by ion implantation. In two of these cases, the alloy epilayer contained either 12% or 20% Ge, and the amorphization depth was greater than the thickness (2000 [Angstrom]) of the SiGe alloy layer. Time-resolved reflectivity measurements showed that the rate of regrowth was not constant in these two cases, but first decreased after passing the SiGe/Si interface, and then increased. The minimum regrowth rate occurred closer to the SiGe/Si interface in the epilayers with the larger Ge atomic fraction. In the third type of sample, the alloy epilayer thickness was [approximately] 7 [mu]m, so that the initial epilayer (15% Ge) had the lattice constant of the bulk alloy. Furthermore, amorphization and regrowth occurred entirely within the relaxed alloy layer. In this case, the regrowth rate was constant. The composition dependence of the regrowth-rate transient in the strained layers is discussed in the context of a critical-thickness'' model of strain relaxation.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- DOE; NASA; USDOE, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6828962
- Report Number(s):
- CONF-921101-28; ON: DE93005154
- Country of Publication:
- United States
- Language:
- English
Similar Records
Time-resolved reflectivity study of solid-phase epitaxial regrowth in relaxed and strained Si{sub 1-x}Ge{sub x} epilayers
Kinetics of solid phase epitaxial regrowth in amorphized Si[sub 0. 88]Ge[sub 0. 12] measured by time-resolved reflectivity
The effects of rapid recrystallization and ion implanted carbon on the solid phase epitaxial regrowth of Si{sub 1-x}Ge{sub x} alloy layers on silicon
Conference
·
Sat Oct 31 23:00:00 EST 1992
·
OSTI ID:10115140
Kinetics of solid phase epitaxial regrowth in amorphized Si[sub 0. 88]Ge[sub 0. 12] measured by time-resolved reflectivity
Journal Article
·
Sun Jan 31 23:00:00 EST 1993
· Applied Physics Letters; (United States)
·
OSTI ID:6901566
The effects of rapid recrystallization and ion implanted carbon on the solid phase epitaxial regrowth of Si{sub 1-x}Ge{sub x} alloy layers on silicon
Conference
·
Sat Jul 01 00:00:00 EDT 1995
·
OSTI ID:101147
Related Subjects
36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
ALLOYS
AMORPHOUS STATE
ELEMENTS
EPITAXY
GERMANIUM ALLOYS
ION IMPLANTATION
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
REFLECTIVITY
RELAXATION
SEMIMETALS
SILICON
SILICON ALLOYS
SUBSTRATES
SURFACE PROPERTIES
360101* -- Metals & Alloys-- Preparation & Fabrication
ALLOYS
AMORPHOUS STATE
ELEMENTS
EPITAXY
GERMANIUM ALLOYS
ION IMPLANTATION
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
REFLECTIVITY
RELAXATION
SEMIMETALS
SILICON
SILICON ALLOYS
SUBSTRATES
SURFACE PROPERTIES