Experimental considerations of higher order parametric x-rays from silicon crystals of varying thicknesses. Master's thesis

Technical Report · Mon Jun 01 04:00:00 EDT 1992

OSTI ID:6828023

Evertson, S R

Generation of parametric x-radiation (PXR) may be described as the Bragg scattering of virtual photons to produce real x-rays which satisfy the Bragg condition N lambda = 2d sin theta sub B where theta sub B is the angle between the electron beam and the crystal plane. Enhanced higher order parametric s-radiation from the <220> and the <111> planes of silicon crystals of varying thicknesses were observed, Production of PXR of order n=1 for both planes of a 20 u m thick crystal and orders n=1, and n=2 of the <220> and the n=1, n=3, and n=4 of the <111> planes of the 44 microns and 320 microns crystals were observed. Exploiting the formation and attenuation lengths of silicon crystals of varying thicknesses, higher order x-ray production is enhanced relative to the lower energy first order x-ray. Photons of 4.5 to 21 keV have been observed. Parametric X-Radiation, PXR, Silicon, Linear Accelerator, Bragg Scattering, Crystalography.

• Research Organization: Naval Postgraduate School, Monterey, CA (United States)
• OSTI ID: 6828023
• Report Number(s): AD-A-256082/9/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure &amp; Phase Studies
ACCELERATORS
ATTENUATION
BENCH-SCALE EXPERIMENTS
BOSONS
BRAGG REFLECTION
COHERENT SCATTERING
CRYSTALS
DETECTION
DIFFRACTION
DIMENSIONS
ELEMENTARY PARTICLES
ELEMENTS
LINEAR ACCELERATORS
MASSLESS PARTICLES
PARAMETRIC ANALYSIS
PHOTONS
PRODUCTION
RADIATION DETECTION
REFLECTION
SCATTERING
SEMIMETALS
SILICON
THICKNESS
X-RAY DETECTION
X-RAY DIFFRACTION