Influence of fast-neutron irradiation on the properties of gallium arsenide doped with various impurities

Journal Article · Tue Jul 01 00:00:00 EDT 1980 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6825420

Yarmolyuk, N I; Vigdorovich, V N; Kolin, N G; Osvenskii, V B; Kharchenko, V A; Kholodnyi, L P

Measurements were made of the electrical resistivity, density, and lattice parameters of gallium arsenide crystals doped with Te, Sn, and Cr as a function of the fast-neutron dose. The influence of neutron irradiation on carrier recombination was studied by recording the photoluminescence spectra before and after irradiation at temperatures of 300 and 77/sup 0/K. The properties after irradiation depended on the nature of the initial dopant.

• Research Organization: State Scientific-Research and Design Institute of the Rare-Metal Industry, Moscow
• OSTI ID: 6825420
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Vol. 14:7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
CRYSTAL DEFECTS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
EXPERIMENTAL DATA
IMPURITIES
LOW TEMPERATURE
MEDIUM TEMPERATURE
NEUTRONS
PHOTOLUMINESCENCE
RECOMBINATION
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CRYSTAL STRUCTURE
DATA
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FERMIONS
GALLIUM COMPOUNDS
HADRONS
INFORMATION
LUMINESCENCE
MATERIALS
NUCLEONS
NUMERICAL DATA
PHYSICAL PROPERTIES
PNICTIDES
RADIATION EFFECTS
360605* - Materials- Radiation Effects