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Vanadium oxide monolayer catalysts. III. A Raman spectroscopic and temperature-programmed reduction study of monolayer and crystal-type vanadia on various supports

Journal Article · · J. Phys. Chem.; (United States)
DOI:https://doi.org/10.1021/j100458a023· OSTI ID:6824048
Vanadium(V) oxide supported on ..gamma..-Al/sub 2/O/sub 3/,CeO/sub 2/,Cr/sub 2/O/sub 3/,SiO/sub 2/,TiO/sub 2/, and ZrO/sub 2/ was studied by x-ray fluorescence, by x-ray diffraction, and especially by the combination of Raman spectroscopy and temperature programmed reduction (TPR) for qualitative and quantitative structural analysis, respectively. Catalysts were prepared via ion-exchange and wet-impregnation methods. The V contents ranged from approx. 1 to 40 wt % V. At low surface concentrations only surface vanadate phases of two-dimensional character are observed for all carriers. According to Raman and TPR data the structure of these surface vanadate species is independent of the preparation technique. At medium and high surface concentrations, the wet-impregnated samples already contain crystalline V/sub 2/O/sub 5/. At equal surface concentrations the ion-exchanged catalysts contain no V/sub 2/O/sub 5/ crystallites. An exception is SiO/sub 2/ on which also crystalline V/sub 2/O/sub 5/ is formed in both preparation techniques. Monolayer stability toward thermal treatment decreases in the order Al/sub 2/O/sub 3/ > TiO/sub 2/ > CeO/sub 2/, whereas on heating ion-exchanged V/SiO/sub 2/ the crystalline V/sub 2/O/sub 5/ spreads out over the silica surface. The reducibilities of the ion-exchanged catalysts, as measured by TPR, can be used as a measure for the contact interaction between vanadia and the carrier oxides. At temperatures of 500 to 800 K, this interaction ranges from strong with titania to weak with silica as a carrier.
Research Organization:
Twente Univ. of Tech., Enschede, Netherlands
OSTI ID:
6824048
Journal Information:
J. Phys. Chem.; (United States), Journal Name: J. Phys. Chem.; (United States) Vol. 84:21; ISSN JPCHA
Country of Publication:
United States
Language:
English

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