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Microstructure of epitaxial YBa sub 2 Cu sub 3 O sub 7 minus x thin films

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.103237· OSTI ID:6819528
;  [1]; ;  [2]
  1. Keck Laboratory of Engineering, California Institute of Technology, Pasadena, CA (USA)
  2. Hughes Research Laboratories, Malibu, CA (USA)
We have investigated the microstructure of epitaxial YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} thin films on SrTiO{sub 3}(100), LaGaO{sub 3}(100), and LaAlO{sub 3} (100) with particular emphasis on how the final microstructure is developed. Cross-sectional transmission electron microscopy as well as plan-view transmission electron microscopy combined with sputter depth profiling were used to study the change in microstructure with the increase in film thickness. For a thin film or near the substrate/film interface of a thick film, the YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} film is composed primarily of grains oriented with {ital c} axis normal to the substrate surface and a small volume fraction of grains with {ital c} axis parallel to the substrate surface. As the film grows thicker, the {ital c}-axis parallel grains increase in size and grow over the top of the {ital c}-axis normal grains. The volume fraction of {ital c}-axis parallel grains increases rapidly as the film thickness increases and eventually the entire film surface is covered by {ital c}-axis parallel grains. However, the number density of the {ital c}-axis parallel grains remains constant throughout the whole film thickness. A growth model is proposed to explain the observed microstructure. Based on this model, a computer simulation is carried out. The simulated microstructure agrees well with the experimental result.
OSTI ID:
6819528
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:21; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English