Electroluminescence characteristics and current-conduction mechanism of a-SiC:H p-i-n thin-film light-emitting diodes with barrier layer inserted at p-i interface

Journal Article · Sat Oct 01 00:00:00 EDT 1994 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6816926

Jen, T S; Pan, J W; Shin, N F; Hong, J W ^[1]; Chang, C Y ^[2]

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1. National Central Univ., Chungli (China). Dept. of Electrical Engineering
2. National Chiao Tung Univ., Hsinchu (Taiwan, Province of China). Inst. of Electronics

In order to improve the electroluminescence (EL) characteristics of the hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), a barrier layer (BL) was inserted at its p-i interface to enhance the hole injection efficiency under forward-bias operation. The a-SiC:H TFLED's with various optical gaps of BL had been fabricated and characterized. In addition, a composition-graded n[sup +]-layer was used to reduce its series and contact resistances to the Al electrode and hence the EL threshold voltage (V[sub th]) of an a-SiC:H BL TFLED. The highest obtainable brightness of an a-SiC:H BL TFLED was 342 cd/m[sup 2] at an injection current density of 600 mA/cm[sup 2] and the lowest EL V[sub th] achievable was 6.0 V. The current-conducting mechanism of an a-SiC:H BL TFLED had also been investigated. Within the lower applied-bias region, it showed an ohmic current, while within the higher applied-bias region, a space-charge-limited current (SCLC) was observed.

• OSTI ID: 6816926
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:10; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
LIGHT EMITTING DIODES
DESIGN
ELECTROLUMINESCENCE
DEPLETION LAYER
HYDROGENATION
PERFORMANCE
SILICON CARBIDES
USES
CARBIDES
CARBON COMPOUNDS
CHEMICAL REACTIONS
LAYERS
LUMINESCENCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON COMPOUNDS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)