Lifetime broadening in GaAs-AlGaAs quantum well lasers
- Philips Research Lab., Redhill, Surrey RH1 5HA (GB)
- Plessey Research Caswell Ltd., Caswell, Towcester, Northants NN12 8EQ (GB)
Experimental observations of spontaneous emission spectra from GaAs-AlGaAs quantum well lasers show that spectral broadening should be included in any realistic model of laser performance. The authors describe a model of the lifetime broadening due to intraband Auger processes of the Landsberg type and develop it for the case of electron-electron scattering in a 2-D system. They apply the model to the calculation of gain and spontaneous emission spectra and gain-current relationships in short-wavelength GaAs-AlGaAs quantum well lasers, and compare their results with those obtained using both a fixed intraband scattering time and one that varies as {ital n}{sup 1/2}, where {ital n} is the volume injected carrier density.
- OSTI ID:
- 6813966
- Journal Information:
- IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA), Vol. 26:3; ISSN 0018-9197
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
74 ATOMIC AND MOLECULAR PHYSICS
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
SEMICONDUCTOR LASERS
EMISSION SPECTRA
ALUMINIUM ARSENIDES
CARRIER DENSITY
ELECTRON-ELECTRON COLLISIONS
GAIN
GALLIUM ARSENIDES
LINE BROADENING
QUANTUM EFFICIENCY
TWO-DIMENSIONAL CALCULATIONS
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
COLLISIONS
EFFICIENCY
ELECTRON COLLISIONS
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SPECTRA
426002* - Engineering- Lasers & Masers- (1990-)
640304 - Atomic
Molecular & Chemical Physics- Collision Phenomena
657002 - Theoretical & Mathematical Physics- Classical & Quantum Mechanics