Surface faceting of (110) GaAs: Analysis and elimination
Conference
·
OSTI ID:6810058
A systematic study has been made on (110) GaAs grown by molecular beam epitaxy. This work represents the first systematic investigation of commonly observed faceting on the (110) GaAs surface which has led to the consistent elimination of the defects. This study involved the analysis of facet geometry, a kinetic model of initial facet formation, and the electrical and optical analysis of facet-free (110) GaAs. The latter was obtained with proper growth conditions and a Ga rich surface exposure from a GaAs substrate angled 6/sup 0/ toward (11 anti 1) Ga.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA); Varian Solid State Microwave Div., Santa Clara, CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6810058
- Report Number(s):
- LBL-22577; CONF-861207-73; ON: DE87006142
- Country of Publication:
- United States
- Language:
- English
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