(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics

Metaferia, Wondwosen; Chenenko, Jason; Packard, Corinne E.; Wong, Evan K.; Ptak, Aaron J.; Schulte, Kevin L.

doi:10.1109/jphotov.2022.3161869

(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics

Journal Article · Tue Apr 19 00:00:00 EDT 2022 · IEEE Journal of Photovoltaics

DOI:https://doi.org/10.1109/jphotov.2022.3161869· OSTI ID:1869274

^[1]; Chenenko, Jason ^[2]; ^[3]; Wong, Evan K. ^[1]; ^[1]; ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
Colorado School of Mines, Golden, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)

Here, we demonstrate the growth of GaAs solar cells by hydride vapor phase epitaxy (HVPE) on epi-ready and previously spalled (110) GaAs wafers as an advance towards a potentially low-cost (110)-based device platform. Controlled spalling offers a fracture-based path to substrate cost amortization, enabling device exfoliation and substrate reuse, but the faceted surface generated during the spalling of (100)-oriented GaAs presents hurdles to direct regrowth of subsequent devices. Spalling of (110) substrates instead eliminates faceting by aligning the substrate surface with the predominant crystal cleavage plane. III-V epitaxy of solar cells is significantly less developed on (110)-oriented substrates, however. Here, we develop (110)-based GaAs solar cells grown by HVPE on epi-ready substrates, demonstrating equal performance to devices grown on the more standard (100) orientation. We also characterize the surface of spalled, (110)-oriented substrates, revealing flat terraces separated by steps with sub-micron-scale height on average. Finally, we present an initial device grown on a previously spalled surface without additional surface re-preparation with nearly 16% efficiency under a simulated AM1.5G spectrum. Together, these results provide preliminary evidence of a potentially low-cost path to enable terrestrial III-V photovoltaics via the (110) substrate orientation.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1869274

Report Number(s):: NREL/JA-5900-81725; MainId:82498; UUID:165bfebd-f048-49c6-8f9e-197275f8029e; MainAdminID:64535

Journal Information:: IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics Journal Issue: 4 Vol. 12; ISSN 2156-3381

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

References (21)

Techno-economic analysis of three different substrate removal and reuse strategies for III-V solar cells: Techno-economic analysis for III-V solar cells Ward, J. Scott; Remo, Timothy; Horowitz, Kelsey Progress in Photovoltaics: Research and Applications, Vol. 24, Issue 9 https://doi.org/10.1002/pip.2776	journal	May 2016
Solar cell efficiency tables (version 56) Green, Martin A.; Dunlop, Ewan D.; Hohl‐Ebinger, Jochen Progress in Photovoltaics: Research and Applications, Vol. 28, Issue 7 https://doi.org/10.1002/pip.3303	journal	July 2020
Evaluation and directions of the photovoltaic technologies Kazmerski, L. L.; Emery, K. A.; DeBlasio, R. Renewable Energy, Vol. 5, Issue 1-4 https://doi.org/10.1016/0960-1481(94)90381-6	journal	August 1994
Controlled spalling-based mechanical substrate exfoliation for III-V solar cells: A review Chen, Jie; Packard, Corinne E. Solar Energy Materials and Solar Cells, Vol. 225 https://doi.org/10.1016/j.solmat.2021.111018	journal	June 2021
Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating Crouse, Dustin; Simon, John; Schulte, Kevin L. Thin Solid Films, Vol. 649 https://doi.org/10.1016/j.tsf.2018.01.031	journal	March 2018
Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy Metaferia, Wondwosen; Braun, Anna K.; Simon, John Crystal Growth & Design, Vol. 21, Issue 7 https://doi.org/10.1021/acs.cgd.1c00235	journal	June 2021
High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology Shahrjerdi, D.; Bedell, S. W.; Ebert, C. Applied Physics Letters, Vol. 100, Issue 5 https://doi.org/10.1063/1.3681397	journal	January 2012
Reuse of GaAs substrates for epitaxial lift-off by employing protection layers Lee, Kyusang; Zimmerman, Jeramy D.; Xiao, Xin Journal of Applied Physics, Vol. 111, Issue 3 https://doi.org/10.1063/1.3684555	journal	February 2012
Controlled exfoliation of (100) GaAs-based devices by spalling fracture Sweet, Cassi A.; Schulte, Kevin L.; Simon, John D. Applied Physics Letters, Vol. 108, Issue 1 https://doi.org/10.1063/1.4939661	journal	January 2016
Perspective: Fundamentals of coalescence-related dislocations, applied to selective-area growth and other epitaxial films McMahon, William E.; Vaisman, Michelle; Zimmerman, Jeramy D. APL Materials, Vol. 6, Issue 12 https://doi.org/10.1063/1.5047945	journal	December 2018
Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies Fan, John C. C.; Bozler, Carl O.; Chapman, Ralph L. Applied Physics Letters, Vol. 32, Issue 6, p. 390-392 https://doi.org/10.1063/1.90065	journal	March 1978
A technique for producing epitaxial films on reuseable substrates McClelland, R. W.; Bozler, C. O.; Fan, J. C. C. Applied Physics Letters, Vol. 37, Issue 6 https://doi.org/10.1063/1.91987	journal	September 1980
Ultrathin, high-efficiency solar cells made from GaAs films prepared by the CLEFT Process Bozler, C. O.; McClelland, R. W.; Fan, J. C. C. IEEE Electron Device Letters, Vol. 2, Issue 8 https://doi.org/10.1109/EDL.1981.25402	journal	August 1981
Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies Bedell, Stephen W.; Shahrjerdi, Davood; Hekmatshoar, Bahman IEEE Journal of Photovoltaics, Vol. 2, Issue 2 https://doi.org/10.1109/JPHOTOV.2012.2184267	journal	April 2012
Comparing Front- and Rear-Junction GaInP Photovoltaic Devices Through Detailed Numerical and Analytical Modeling Sun, Yubo; Perna, Allison; Bermel, Peter IEEE Journal of Photovoltaics, Vol. 9, Issue 2 https://doi.org/10.1109/JPHOTOV.2019.2892530	journal	March 2019
High-efficiency GaAs/CuInSe/sub 2/ and AlGaAs/CuInSe/sub 2/ thin-film tandem solar cells Gale, R. P.; McClelland, R. W.; Dingle, B. D. IEEE Conference on Photovoltaic Specialists https://doi.org/10.1109/PVSC.1990.111590	conference	January 1990
Sonic Lift-off of GaAs-based Solar Cells with Reduced Surface Facets Coll, Pablo Guimera; Neumann, Anica; Smith, David 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) https://doi.org/10.1109/PVSC43889.2021.9518656	conference	June 2021
(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics Metaferia, Wondwosen; Chenenko, Jason; Packard, Corinne E. 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) https://doi.org/10.1109/PVSC43889.2021.9518754	conference	June 2021
Recent HVPE grown solar cells at NREL Simon, John; Roberts, Dennice M.; Boyer, Jacob 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) https://doi.org/10.1109/PVSC43889.2021.9519112	conference	June 2021
A Techno-Economic Analysis and Cost Reduction Roadmap for III-V Solar Cells Horowitz, Kelsey A.; Remo, Timothy W.; Smith, Brittany https://doi.org/10.2172/1484349	report	November 2018
III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy Simon, John; Schulte, Kevin; Horowitz, Kelsey Crystals, Vol. 9, Issue 1 https://doi.org/10.3390/cryst9010003	journal	December 2018

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14 SOLAR ENERGY
GaAs
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III-V
PV
hydride vapor phase epitaxy
photovoltaic
spalling

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