Effects of radiation on microelectronics and techniques for hardening
Conference
·
OSTI ID:6809845
Total dose damage, displacement damage, and single particle events can cause microelectronic circuits to cease to function properly. The tolerance of an integrated circuit to radiation damage can be affected by a large number of factors, including the irradiation conditions, postirradiation conditions, transistor characteristics, and circuit design. Improvements in hardness can be achieved by proper fabrication techniques (including minimization of gate oxide thickness, processing temperatures, and the use of hydrogen for MOS devices) and appropriate design considerations. 23 refs., 5 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6809845
- Report Number(s):
- SAND-88-2722C; CONF-881151-10; ON: TI89001227
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
DAMAGING NEUTRON FLUENCE
DESIGN
ELECTRONIC CIRCUITS
HARDENING
HARDNESS
HOLES
MECHANICAL PROPERTIES
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
NEUTRON FLUENCE
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
DAMAGING NEUTRON FLUENCE
DESIGN
ELECTRONIC CIRCUITS
HARDENING
HARDNESS
HOLES
MECHANICAL PROPERTIES
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
NEUTRON FLUENCE
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS