Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process: Task II. LSSA Project. Quarterly report No. 2, January 1, 1978--March 31, 1978

Technical Report · Wed Mar 01 04:00:00 EST 1978

DOI:https://doi.org/10.2172/6808668· OSTI ID:6808668

Duffy, M T; Berkman, S; Cullen, G W

Silicon sessile drop experiments were performed on mullite and beryllia substrates both with and without a chemically vapor deposited-silicon nitride (CVD-Si/sub 3/N/sub 4/) coating. Results of x-ray analysis on the thermal stability of Si/sub 3/N/sub 4/, both in the presence and absence of molten silicon, show that the as-prepared amorphous layers are converted predominantly to the ..cap alpha.. phase with high temperature treatment. Silicon ribbon specimens doped with boron (rho = 1 OMEGA-cm) were grown from dies coated with Si/sub 3/N/sub 4/ for solar cell fabrication. Solar cells without AR coatings, fabricated in two ribbon samples, gave efficiencies of 6.6% and 8.0%, respectively, relative to 9.6% for a Czochralski control.

• Research Organization: RCA Labs., Princeton, N.J. (USA)
• DOE Contract Number: NAS-7-100-954901
• OSTI ID: 6808668
• Report Number(s): DOE/JPL/954901-2
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CRYSTAL DOPING
CRYSTAL GROWTH
CZOCHRALSKI METHOD
DEPOSITION
DIES
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
FABRICATION
INORGANIC ION EXCHANGERS
ION EXCHANGE MATERIALS
MINERALS
MULLITE
NITRIDES
NITROGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SILICON SOLAR CELLS
SOLAR CELLS
SUBSTRATES
SURFACE COATING