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U.S. Department of Energy
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Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process. Task II. LSSA Project. Quarterly report No. 5, October 1-December 31, 1978

Technical Report ·
DOI:https://doi.org/10.2172/5927633· OSTI ID:5927633

Several ribbon growth experiments were performed in the Mark II ribbon growth facility from V-shaped dies coated with CVD Si/sub 3/N/sub 4/. The most significant result was the ability to perform five consecutive growth runs from the same die without mechanical degradation of the die through temperature cycling. The die was made from vitreous carbon coated with CVD Si/sub 3/N/sub 4/. Silicon oxynitride, Si/sub 2/N/sub 2/O, was examined with respect to thermal stability in contact with molten silicon. The results of x-ray analysis indicate that this material is converted to both ..cap alpha..- and ..beta..-Si/sub 3/N/sub 4/ in the presence of molten silicon. The latter phase is the dominant phase. Experiments on the stability of CVD SiO/sub x/N/sub y/ show that this material can be maintained in contact with molten silicon (sessile drop test) for greater than 30 h at 1450/sup 0/C without total decomposition. These layers are converted mainly to ..beta..-Si/sub 3/N/sub 4/. The fabrication of coated EFG-type dies is proving difficult because of thermal expansion mismatch between layer and substrate and instability of substrate materials at high temperature. Self-supporting CVD dies have been prepared on silicon substrates but the wall thickness is not greater than about 50 ..mu..m. Experiments are continuing.

Research Organization:
RCA Labs., Princeton, NJ (USA)
Sponsoring Organization:
USDOE
DOE Contract Number:
NAS-7-100-954901
OSTI ID:
5927633
Report Number(s):
DOE/JPL/954901-5
Country of Publication:
United States
Language:
English