Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2, lssa project. Quarterly report. [For molten silicon]
Technical Report
·
OSTI ID:6352072
Silicon sessile drop experiments were performed on a variety of commercially available refractory carbides, nitrides, oxides, and borides to examine the potential of these materials for applications involving either direct contact with molten silicon or as substrates for CVD coatings in the fabrication of dies and crucibles for containing molten silicon. Simultaneous experiments were also conducted with CVD layers of SiC, Si/sub 3/N/sub 4/, and SiOxNy. Silicon nitride layers, deposited with NH/sub 3/:SiH/sub 4/ ratios ranging from 100:1 down to 5:1, were examined in sessile drop experiments to determine if the layers are degraded as a result of using lower reagent ratios. Preliminary experiments were undertaken on the stability of CVD Si3N/sub 4/ near the melting point of silicon. Silicon ribbon segments were grown from vitreous carbon dies which had been coated with CVD Si/sub 3/N/sub 4/. Depending upon the purity of the die materials, ribbon resistivity values up to 40 Omega cm were obtained.
- Research Organization:
- RCA Labs., Princeton, NJ (USA)
- OSTI ID:
- 6352072
- Report Number(s):
- N-78-24553; NASA-CR-157096; QR-1
- Country of Publication:
- United States
- Language:
- English
Similar Records
Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process: Task II. LSSA Project. Quarterly report No. 1
Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process. Task II: LSSA project. Quarterly report No. 4
Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process. Task II. LSSA Project. Quarterly report No. 5, October 1-December 31, 1978
Technical Report
·
Wed Nov 30 23:00:00 EST 1977
·
OSTI ID:5064341
Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process. Task II: LSSA project. Quarterly report No. 4
Technical Report
·
Fri Sep 01 00:00:00 EDT 1978
·
OSTI ID:6081575
Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process. Task II. LSSA Project. Quarterly report No. 5, October 1-December 31, 1978
Technical Report
·
Thu Nov 30 23:00:00 EST 1978
·
OSTI ID:5927633
Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
BORIDES
BORON COMPOUNDS
CARBIDES
CARBON COMPOUNDS
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRUCIBLES
CRYSTAL GROWTH
DEPOSITION
DIES
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
IMPURITIES
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORIES
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SILICON NITRIDES
SILICON SOLAR CELLS
SOLAR CELLS
SURFACE COATING
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
BORIDES
BORON COMPOUNDS
CARBIDES
CARBON COMPOUNDS
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRUCIBLES
CRYSTAL GROWTH
DEPOSITION
DIES
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
IMPURITIES
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORIES
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SILICON NITRIDES
SILICON SOLAR CELLS
SOLAR CELLS
SURFACE COATING