Gettering in high resistive float zone silicon wafers for silicon detector applications

Conference · Fri Jan 01 00:00:00 EST 1988

OSTI ID:6807785

Li, Z; Kraner, H W

Experiments on intrinsic gettering of high resistive float-zone silicon wafers used for silicon position sensitive detectors lead to reduction of detector leakage current. Minority carrier life-time of gettered Si wafers was increased and measurements of C-V characteristics of gettered Si wafers also indicate that the gettering process produces an improved SiO/sub 2//Si interface. Intrinsic gettering was also compared with As-implanted and P-diffused back side gettering and found to be superior in this study.

• Research Organization: Brookhaven National Lab., Upton, NY (USA)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6807785
• Report Number(s): BNL-41347; CONF-881103-2; ON: DE88012136
• Resource Relation: Conference: IEEE nuclear science symposium, Orlando, FL, USA, 9 Nov 1988; Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
SILICON
GETTERING
CAPACITANCE
FABRICATION
SI SEMICONDUCTOR DETECTORS
ZONE MELTING
ELECTRICAL PROPERTIES
ELEMENTS
MEASURING INSTRUMENTS
MELTING
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMIMETALS
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments
360601 - Other Materials- Preparation & Manufacture