Gettering in high resistive float zone silicon wafers for silicon detector applications

Conference · Wed Feb 01 00:00:00 EST 1989 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6421857

Li, Z; Kraner, H W

Experiments on intrinsic gettering of high resistivity float-zone silicon wafers used for silicon position sensitive detectors lead to reduction of detector leakage current. Minority carrier life-time of gettered Si wafers was increased and measurements of C-V characteristics of gettered Si wafers also indicate that the gettering process produces an improved SiO/sub 2//Si interface. Intrinsic gettering was also compared with As-implanted back side gettering, and found to be superior in this case.

• Research Organization: Brookhaven National Lab., Upton, NY (US)
• OSTI ID: 6421857
• Report Number(s): CONF-881103-; TRN: 89-009657
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. 36:1; Conference: IEEE nuclear science symposium, Orlando, FL, USA, 9 Nov 1988
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
SILICON OXIDES
GETTERING
ARSENIC
EXPERIMENTAL DATA
ION IMPLANTATION
LEAKAGE CURRENT
RADIATION DETECTORS
SILICON
CHALCOGENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELEMENTS
INFORMATION
MEASURING INSTRUMENTS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
SEMIMETALS
SILICON COMPOUNDS
360605* - Materials- Radiation Effects
440101 - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments
654001 - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments