Reduction of spectral linewidth in AlGaAs/GaAs distributed feedback lasers by a multiple quantum well structure

Journal Article · Mon Apr 06 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98014· OSTI ID:6806300

Noda, S; Kojima, K; Kyuma, K; Hamanaka, K; Nakayama, T

We demonstrate the reduction of the spectral linewidth in AlGaAs/GaAs distributed feedback lasers by a multiple quantum well structure for the first time. The spectral linewidth-output power product was 54 MHz mW and was eight times smaller than that of conventional double heterostructure distributed feedback lasers. The narrowest spectral linewidth was 10.5 MHz at 5 mW.

• Research Organization: Mitsubishi Electric Corporation, Central Research Laboratory, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
• OSTI ID: 6806300
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:14; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
LINE WIDTHS
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS