Generalized formula for curvature radius and layer stresses caused by thermal strain in semiconductor multilayer structures
Journal Article
·
· J. Appl. Phys.; (United States)
The generalized formulas have been derived for the curvature radius and layer stresses caused by thermal strain in semiconductor multilayer structure with different elastic moduli and growth temperatures. Several special forms and applications are given.
- Research Organization:
- Department of Physics, Peking University, Peking, China
- OSTI ID:
- 6801609
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:1; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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